FDS6690A. Аналоги и основные параметры

Наименование производителя: FDS6690A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm

Тип корпуса: SO8

Аналог (замена) для FDS6690A

- подборⓘ MOSFET транзистора по параметрам

 

FDS6690A даташит

 ..1. Size:452K  fairchild semi
fds6690a.pdfpdf_icon

FDS6690A

February 2007 tm FDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 11 A, 30 V. RDS(ON) = 12.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 17.0 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resi

 0.1. Size:746K  fairchild semi
fds6690as.pdfpdf_icon

FDS6690A

May 2008 tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 10 A, 30 V. RDS(ON) max= 12 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 15 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 0.2. Size:777K  onsemi
fds6690as.pdfpdf_icon

FDS6690A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:78K  fairchild semi
fds6690.pdfpdf_icon

FDS6690A

February 1997 PRELIMINARY FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features 10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V. converters using either synchronous or conventional switching Optimize

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