2SJ363Silicon P-Channel MOS FETApplicationLow frequency power switchingFeatures Low on-resistance Low drive current 4 V gate drive device can be driven from 5 V sourceOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SJ363Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source vo

2SJ363www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL

2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ360 High Speed, High current Switching Applications Unit: mmChopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.55 (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS =

Ordering number:EN4918P-Channel Silicon MOSFET2SJ362Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ362]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ362]6.5 2.35.0 0.5

Silicon Junction FETs (Small Signal) 2SJ3642SJ364Silicon P-Channel JunctionUnit : mmFor analog switch2.1 0.10.425 1.25 0.1 0.425 Features Low ON-resistance1 Low-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitGate-Drain voltage VGDS 65 V1 : SourceDrain current ID 20 mA2 : Drain EIAJ : SC-70Gate cur

2SJ361Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V sourceOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SJ361Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS

SMD Type MOSFETP-Channel MOSFET2SJ3601.70 0.1 Features VDS (V) =-60V ID =-1 A RDS(ON) 0.73 (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.2 (VGS =-4V) High forward transfer admittance1.GateD 2.Drain3.SourceG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Drain-Gate voltage

2SJ360www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim