Справочник MOSFET. 2SJ574

 

2SJ574 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ574
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: MPAK

 Аналог (замена) для 2SJ574

 

 

2SJ574 Datasheet (PDF)

 ..1. Size:56K  renesas
 2sj574.pdf

2SJ574 2SJ574

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.1. Size:41K  sanyo
 2sj577.pdf

2SJ574 2SJ574

Ordering number:ENN6411AP-Channel Silicon MOSFET2SJ577Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ577]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55 SANYO : SMPunit:mm2090A[2SJ577]10.24.51.31 2 30 to 0.30.81.2

 9.2. Size:42K  sanyo
 2sj579.pdf

2SJ574 2SJ574

Ordering number:ENN6384P-Channel Silicon MOSFET2SJ579Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ579]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPar

 9.3. Size:42K  sanyo
 2sj578.pdf

2SJ574 2SJ574

Ordering number:ENN6408P-Channel Silicon MOSFET2SJ578Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ578]4.51.51.60.4 0.53 2 10.41.53.00.751 : Gate2 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C

 9.4. Size:43K  renesas
 2sj576.pdf

2SJ574 2SJ574

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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