Справочник MOSFET. 2SJ576

 

2SJ576 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ576
   Маркировка: AP
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 0.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Минимальное напряжение отсечки |Vgs(off)|: 1.3 V
   Максимально допустимый постоянный ток стока |Id|: 0.1 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 20 pf
   Сопротивление сток-исток открытого транзистора (Rds): 3.3 Ohm
   Тип корпуса: CMPAK

 Аналог (замена) для 2SJ576

 

 

2SJ576 Datasheet (PDF)

 ..1. Size:43K  renesas
2sj576.pdf

2SJ576 2SJ576

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.1. Size:41K  sanyo
2sj577.pdf

2SJ576 2SJ576

Ordering number:ENN6411AP-Channel Silicon MOSFET2SJ577Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ577]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55 SANYO : SMPunit:mm2090A[2SJ577]10.24.51.31 2 30 to 0.30.81.2

 9.2. Size:42K  sanyo
2sj579.pdf

2SJ576 2SJ576

Ordering number:ENN6384P-Channel Silicon MOSFET2SJ579Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ579]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPar

 9.3. Size:42K  sanyo
2sj578.pdf

2SJ576 2SJ576

Ordering number:ENN6408P-Channel Silicon MOSFET2SJ578Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ578]4.51.51.60.4 0.53 2 10.41.53.00.751 : Gate2 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C

 9.4. Size:56K  renesas
2sj574.pdf

2SJ576 2SJ576

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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