September 2000FDS8433ASingle P-Channel 2.5V Specified MOSFETFeaturesGeneral Description -5 A, -20 V. RDS(on) = 0.047 @ VGS = -4.5 VThis P-Channel enhancement mode power field effecttransistors is produced using Fairchilds proprietary, RDS(on) = 0.070 @ VGS = -2.5 Vhigh cell density, DMOS technology. This very highdensity processis especially tailored to minimiz

FDS8433ASingle P-Channel 2.5V Specified MOSFETFeaturesGeneral Description -5 A, -20 V. RDS(on) = 0.047 @ VGS = -4.5 VThis P-Channel enhancement mode power field effect transistors is produced using ON Semiconductors RDS(on) = 0.070 @ VGS = -2.5 Vproprietary, high cell density, DMOS technology. This very high density processis especially Fast switching speed.

FDS8435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

December 2005 FDS8449 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.

July 2009FDS8449_F085 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.

November 2006FDS8447tmSingle N-Channel PowerTrench MOSFET 40V, 12.8A, 10.5mFeatures General DescriptionThis single N-Channel MOSFET is produced using Max rDS(on) = 10.5m at VGS = 10V, ID = 12.8AFairchild Semiconductors advanced PowerTrench Max rDS(on) = 12.3m at VGS = 4.5V, ID = 11.4A process that has been especially tailored to minimize the Low gate char

FDS8449-F085N-Channel PowerTrench MOSFET40V, 7.6A, 29m Features Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A RoHS Compliant Qualified to AEC Q101Applications Inverter Power SuppliesMOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Rat

FDS8449 40V N-Channel PowerTrench MOSFET Features General Description 7.6 A, 40V RDS(on) = 29m @ VGS = 10VThese N-Channel MOSFETs are produced using ONRDS(on) = 36m @ VGS = 4.5V Semiconductors advanced PowerTrench process that has been especially tailored to minimize High power handling capability in a widely usedon-state resistance and yet maintain superior

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS8447www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectifica