Справочник MOSFET. 2SK1567

 

2SK1567 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1567
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 35 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 7 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 55 ns
   Выходная емкость (Cd): 280 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.7 Ohm
   Тип корпуса: TO220FM

 Аналог (замена) для 2SK1567

 

 

2SK1567 Datasheet (PDF)

 8.1. Size:82K  renesas
2sk1566.pdf

2SK1567
2SK1567

2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous: ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: T

 8.2. Size:210K  inchange semiconductor
2sk1569.pdf

2SK1567
2SK1567

isc N-Channel MOSFET Transistor 2SK1569DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.3. Size:212K  inchange semiconductor
2sk1565.pdf

2SK1567
2SK1567

isc N-Channel MOSFET Transistor 2SK1565DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.4. Size:212K  inchange semiconductor
2sk1562.pdf

2SK1567
2SK1567

isc N-Channel MOSFET Transistor 2SK1562DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.5. Size:213K  inchange semiconductor
2sk1564.pdf

2SK1567
2SK1567

isc N-Channel MOSFET Transistor 2SK1564DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.6. Size:213K  inchange semiconductor
2sk1563.pdf

2SK1567
2SK1567

isc N-Channel MOSFET Transistor 2SK1563DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK1708

 

 
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