2SK1579
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1579
Маркировка: DY
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 7
V
|Vgs(off)|ⓘ -
Минимальное напряжение отсечки: 0.4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2
A
Tjⓘ - Максимальная температура канала: 150
°C
Cossⓘ - Выходная емкость: 150
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25
Ohm
Тип корпуса:
UPAK
Аналог (замена) для 2SK1579
2SK1579
Datasheet (PDF)
..1. Size:70K renesas
2sk1579.pdf 2SK1579 Silicon N Channel MOS FET REJ03G0956-0200 (Previous: ADE-208-1296) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Suitable for low voltage operation Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. DrainG 3. Source44. DrainSNote: Markin
8.1. Size:120K sanyo
2sk1578.pdf Ordering number:EN4178AN-Channel Junction FET2SK1578Capacitor Microphone ApplicationsFeatures Package Dimensions Especially suited for use in audio, telephone capaci-unit:mmtor microphones.2034A Excellent voltage characteristics.[2SK1578] Excellent transient characteristics.2.24.0 Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.3
8.2. Size:82K renesas
2sk1573.pdf 2SK1573 Silicon N Channel MOS FET REJ03G0955-0200 (Previous: ADE-208-1295) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D
8.3. Size:96K renesas
rej03g0955 2sk1573ds.pdf To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:988K renesas
2sk1572.pdf To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:216K inchange semiconductor
2sk1570.pdf isc N-Channel MOSFET Transistor 2SK1570DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
8.6. Size:59K inchange semiconductor
2sk1574.pdf INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1574 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYM
8.7. Size:216K inchange semiconductor
2sk1571.pdf isc N-Channel MOSFET Transistor 2SK1571DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
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