2SK1611 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1611
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 3.2 Ohm
Тип корпуса: SC67
2SK1611 Datasheet (PDF)
2sk1611.pdf
Power F-MOS FETs 2SK16112SK1611Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator, AC adaptor) 1.3 0.2For high-frequency power amplification1.4 0.1+0.20
2sk1611.pdf
isc N-Channel MOSFET Transistor 2SK1611DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
2sk161.pdf
2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit: mm VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Y | = 9 mS (typ.) fs Extremely low reverse transfer capacitance: C = 0.1 pF (typ.) rssMaximum Ratings (Ta == 25C) ==Characteris
2sk1614.pdf
Power F-MOS FETs 2SK16142SK1614Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS, 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0
2sk1613.pdf
Power F-MOS FETs 2SK16132SK1613Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
2sk1612.pdf
Power F-MOS FETs 2SK16122SK1612Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2 1.4 0.1For high-frequency power amplification+0.20.5 -0.10.8
2sk1610.pdf
Power F-MOS FETs 2SK16102SK1610Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
2sk1618.pdf
2SK1618(L), 2SK1618(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1618(L), 2SK1618(S)Absolute Maximum Rating
2sk1614.pdf
isc N-Channel MOSFET Transistor 2SK1614DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
2sk1613.pdf
isc N-Channel MOSFET Transistor 2SK1613DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
2sk1612.pdf
isc N-Channel MOSFET Transistor 2SK1612DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
2sk1610.pdf
isc N-Channel MOSFET Transistor 2SK1610DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
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