2SK1693 - Даташиты. Аналоги. Основные параметры

isc N-Channel MOSFET Transistor 2SK1693DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switchingSuitable for switching regulator, DCDC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM

Ordering number:EN4224N-Channel Silicon MOSFET2SK1691Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1691]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1691]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G

Ordering number:EN4223N-Channel Silicon MOSFET2SK1690Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1690]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1690]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1697Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1697Absolut

2SK1698Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1698Absolut

isc N-Channel MOSFET Transistor 2SK1692DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed. high current switching applications.DC-DC converter and motor driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL AR

isc N-Channel MOSFET Transistor 2SK1699DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Voltagehigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G