June 1999FDT439NN-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 Vis produced using Fairchild Semiconductor's proprietary,RDS(on) = 0.058 @ VGS = 2.5 Vhigh cell density, DMOS technology. This very highdensity process is especia

June 1999FDT439NN-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 Vis produced using Fairchild Semiconductor's proprietary,RDS(on) = 0.058 @ VGS = 2.5 Vhigh cell density, DMOS technology. This very highdensity process is especia

FDT439Nwww.VBsemi.twwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis

April 2011FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.5 A, 20 V. RDS(ON) = 0.050 @ VGS = 4.5 V using Fairchild Semiconductors advancedRDS(ON) = 0.070 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state r

FDT434Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S