FDT439N. Аналоги и основные параметры

Наименование производителя: FDT439N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: SOT223

Аналог (замена) для FDT439N

- подборⓘ MOSFET транзистора по параметрам

 

FDT439N даташит

 ..1. Size:145K  fairchild semi
 fdt439n.pdf pdf_icon

FDT439N

June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V is produced using Fairchild Semiconductor's proprietary, RDS(on) = 0.058 @ VGS = 2.5 V high cell density, DMOS technology. This very high density process is especia

 ..2. Size:211K  onsemi
 fdt439n.pdf pdf_icon

FDT439N

June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V is produced using Fairchild Semiconductor's proprietary, RDS(on) = 0.058 @ VGS = 2.5 V high cell density, DMOS technology. This very high density process is especia

 ..3. Size:924K  cn vbsemi
 fdt439n.pdf pdf_icon

FDT439N

FDT439N www.VBsemi.tw www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis

 9.1. Size:233K  fairchild semi
 fdt434p.pdf pdf_icon

FDT439N

April 2011 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.5 A, 20 V. RDS(ON) = 0.050 @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 0.070 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state r

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