2SK2390 - описание и поиск аналогов

2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2390 Absolute

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2398 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode Vth = 1.5 3.0 V (V = 10 V, I = 1 mA)

2SK2391 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2391 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 66 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhanceme

2SK2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2399 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.17 (typ.) DS (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

Ordering number ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications Package Dimensions AM tuner RF amplifier. unit mm Low-noise amplifier. 2034A [2SK2395] 2.2 4.0 Features Large yfs . Small Ciss. 0.4 0.5 Ultralow noise figure. 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 3.8nom SANYO SPA S

Ordering number EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Applications Package Dimensions AM tuner RF amplifier. unit mm Low-noise amplifier. 2050A [2SK2394] Features 0.4 0.16 Large yfs . 3 Small Ciss. 0 to 0.1 Small-sized package permitting 2SK2394-applied sets to be made small slim. Ultralow noise figure

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

N-channel MOS-FET 2SK2397-01MR FAP-II Series 800V 2,3 5A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2393 Absolute Maximum Ratings (Ta = 25

isc N-Channel MOSFET Transistor 2SK2398 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL