2SK301 - описание и поиск аналогов

Silicon Junction FETs (Small Signal) 2SK301 2SK301 Silicon N-Channel Junction Unit mm For low-frequency amplification 5.0 0.2 4.0 0.2 For switching Features Low noise, high gain High gate-drain voltage VGDO +0.2 +0.2 0.45 0.1 0.45 0.1 1.27 1.27 Absolute Maximum Ratings (Ta = 25 C) 1 2 3 Parameter Symbol Rating Unit 1 Drain 2 Gate Drain-Source voltage VDSX

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK3013 Case ITO-3P (FP16W60VX2) 600V 16A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input Inverter

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK3012 Case MTO-3P (Unit mm) (F16W60VX2) 600V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK3017 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.05 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10

Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering u

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated symbol KN 2) Fast switching speed. 3) Low voltage drive (2.5

2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit mm) Structure Silicon N-channel UMT3 MOSFET 2.0 0.9 0.3 0.2 0.7 (3) Applications Interfacing, switching (30V, 100mA) (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Features (2) Gate Abbreviated symbol KN 1) Low on-resistance. (3) Drain 2) Fast switching s

Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3F (3) Features 1) High-speed switching. (1) (2) 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type

2SK3019A Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C

2SK3019 Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55

SK3018 Features Low On-Resistiance Low Input Capaacitance Maximum Ratings

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily des

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment

2SK3018 N-Channel Enhancement Mode MOSFET Features External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Units mm Structure SOT-323 S

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FE

2SK3018W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 GATE Description *Gate SOT-323(SC-70) Protection Diode * Low on-resistance. 2 SOURCE * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features * Simple Drive Requirement * Small Package Outline Maxi

2SK3019T N-Channel MOSFET 3 P b Lead(Pb)-Free 1 2 1. GATE FEATURES 2. SOURCE * Low on-resistance 3. DRAIN * Fast switching speed * Low voltage drive makes this device ideal for portable equipment SOT-523(SC-75) * Easily designed drive circuits * Easy to parallel Maximum Ratings (TA=25 Cunless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 3

FM120-M WILLAS THRU 2SK3018LT1 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURES le surface mounted application i

FM120-M WILLAS THRU 2SK3019TT1 SOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low on-resistance Low

FM120-M WILLAS 2SK3018WT1 THRU SOT-323 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicat

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 External dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated sym

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3018 Transistor 2.5V Drive Nch MOS FET External dimensions (Unit mm) 2SK3018 SOT-323 2.0 0.9 0.3 0.2 0.7 Structure (3) Silicon N-channel MOSFET (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol KN (3) Drain Interfacing, switching (30V, 100mA) SO

Spec. No. C800S3 Issued Date 2010.07.19 CYStech Electronics Corp. Revised Date 2013.12.10 Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3018S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla

Spec. No. C800C3 Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

2SK3018 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applicatio

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching(30V,100mA) 1 Features 2 Low on-resistance SOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit Drive circuits can be simple Drain Parallel use is easy we declare that the material of product compliance with RoHS

LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET L2SK3018WT1G 100 mA, 30 V 3 Features 1) Low on-resistance. 1 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. SC-70 5) Easy to parallel. We declare that the material of product compliance with RoHS requirements. N - Channel MAX

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V Drain ID = 0.1 A 1 2 RDS(ON) 8 (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 13 (VGS = 2.5V) Gate 1. Gate Gate 2. Source Protection Diode 3. Drain Source Absolute Maximum Ratings Ta = 25 Par

SMD Type MOSFET N-Channel MOSFET 2SK3019 Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this Drain device ideal for portable equipment. Easily designed drive circuits. 1 Gate Easy to parallel. Gate 2 Source 3 Drain Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V 1 2 Drain ID = 0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 8 (VGS = 4V) RDS(ON) 13 (VGS = 2.5V) Gate 1. Gate 2. Source Gate 3. Drain Protection Diode Source Absolute Maximum Ratings Ta = 25 Parameter

2SK3018W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 300mA D R ( at V =10V) 8.0ohm DS(ON) GS R ( at V =4.5V) 13.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

2SK3018 N-Channel Power MOSFET MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 30 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 100 mA Drain Current (pulsed) IDRM 400 mA THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Characteristi

Plastic-Encapsulate Mosfets 2SK3018 FEATURES N-Channel MOSFET Fast switching speed and low on-resistance. Easily designed drived circuits. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) 1.Gate 2.Source SOT-23 Parameter Symbol Ratings Unit 3.Drain VDS 30 Drain-Source Voltage V VGS Gate-source Voltage V 20 Drain ID Drain Current (Continuous) 100 mA IDM Dra

2SK3019 N-channel MOSFET SOT-523 FEATURES 3 Low on-resistance 1 Fast switching speed 1. GATE Low voltage drive makes this device ideal for portable equipment 2 2. SOURCE Easily designed drive circuits 3. DRAIN Easy to parallel Marking KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Units Symbol Parameter Value VDS D

2SK3018W N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) = 25 C unless otherwise noted) MOSFET ELECTRICAL CHARACT

TAK CHEONG SEMICONDUCTOR 150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units 2 VDS Drain-Source Voltage 30 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 100 mA SOT-523 PD Power Dissipation 1

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-Channel 30-V(D-S) MOSFET 2SK3018 V(BR)DSS RDS(on)MAX ID SOT-23 SOT-323 2.5 @ 4.5V 3 30V 0.1A 1.GATE 3.0 @ 2.5V 2.SOURCE 3.DRAIN 1 2 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for MARKING Equivalent Circuit por

MMBT5551 2SK3018 AO3400 SI2305 SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES Low on-resistance Fast switching speed 1. GATE 2. SOURCE Low voltage drive makes this device ideal for portable equipment 3. DRAIN Easily designed drive circuits Easy to parallel Marking KN MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted)

isc N-Channel MOSFET Transistor 2SK3013 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3017 FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3012 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d