Справочник MOSFET. 2SK2569

 

2SK2569 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2569
   Маркировка: ZN-
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 86 ns
   Cossⓘ - Выходная емкость: 17.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: MPAK

 Аналог (замена) для 2SK2569

 

 

2SK2569 Datasheet (PDF)

 ..1. Size:104K  renesas
 2sk2569.pdf

2SK2569 2SK2569

2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31G 1. Source22. Gate3. DrainSNote:

 8.1. Size:59K  renesas
 2sk2568.pdf

2SK2569 2SK2569

2SK2568 Silicon N Channel MOS FET REJ03G1017-0300 (Previous: ADE-208-1363) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flang

 8.2. Size:125K  fuji
 2sk2561-01r.pdf

2SK2569 2SK2569

N-channel MOS-FET2SK2561-01RFAP-II Series 600V 1,2 9A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

 8.3. Size:137K  fuji
 2sk2562-01r.pdf

2SK2569 2SK2569

N-channel MOS-FET2SK2562-01RFAP-II Series 800V 2,2 7A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

 8.4. Size:246K  shindengen
 2sk2564.pdf

2SK2569 2SK2569

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2564Case : E-packCase : FTO-220(Unit : mm)(F8F60VX2)600V 8AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching p

 8.5. Size:252K  shindengen
 2sk2563 f4f60vx2.pdf

2SK2569 2SK2569

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2563Case : E-packCase : FTO-220(Unit : mm)(F4F60VX2)600V4AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching po

 8.6. Size:241K  inchange semiconductor
 2sk2564.pdf

2SK2569 2SK2569

isc N-Channel MOSFET Transistor 2SK2564DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PAR

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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