2SK2855 - Даташиты. Аналоги. Основные параметры

2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 10 VGate-Source Voltage VGSS 6 VDrain Current ID 1.0 ADrain Power Dissipation PD* 0.5 WChannel Temperature Tch 150 CStorage Temperature Range Tstg -55~150 C*:

2SK2851Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-4781st. EditionFeatures Low on-resistanceRDS(on) = 0.055 typ. (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SK2851Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to

2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 10 VGate-Source Voltage VGSS 6 VDrain Current ID 0.5 ADrain Power Dissipation PD* 0.5 WChannel Temperature Tch 150 CStorage Temperature Range Tstg -55~150 C *:

Ordering number:EN5851N Channel Silicon MOSFET2SK2859Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low On resistance.unit:mm Ultrahigh-speed switching.2149 4V drive.[2SA2859]8 51 : No Contact2 : Source3 : No Contact4 : Gate140.25 : Drain5.06 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolut

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet 2SK2857C R07DS1261EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 11, 2015Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 105 m MAX. (VGS =

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SMD Type MOSFETN-Channel MOSFET2SK28571.70 0.1 Features VDS (V) = 60V ID = 4 A0.42 0.1 RDS(ON) 150m (VGS = 10V) 0.46 0.1 RDS(ON) 220m (VGS = 4V)1.GateDrain2.Drain3.SourceInternalGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Sou

2SK2857www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

isc N-Channel MOSFET Transistor 2SK2850DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB