2SK2855 - описание и поиск аналогов

2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 6 V Drain Current ID 1.0 A Drain Power Dissipation PD* 0.5 W Channel Temperature Tch 150 C Storage Temperature Range Tstg -55 150 C *

2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features Low on-resistance RDS(on) = 0.055 typ. (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 1. Source 3 2 2. Drain 1 3. Gate S 2SK2851 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to

2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 6 V Drain Current ID 0.5 A Drain Power Dissipation PD* 0.5 W Channel Temperature Tch 150 C Storage Temperature Range Tstg -55 150 C *

Ordering number EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features Package Dimensions Low On resistance. unit mm Ultrahigh-speed switching. 2149 4V drive. [2SA2859] 8 5 1 No Contact 2 Source 3 No Contact 4 Gate 14 0.2 5 Drain 5.0 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolut

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet 2SK2857C R07DS1261EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 11, 2015 Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 105 m MAX. (VGS =

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SMD Type MOSFET N-Channel MOSFET 2SK2857 1.70 0.1 Features VDS (V) = 60V ID = 4 A 0.42 0.1 RDS(ON) 150m (VGS = 10V) 0.46 0.1 RDS(ON) 220m (VGS = 4V) 1.Gate Drain 2.Drain 3.Source Internal Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Sou

2SK2857 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

isc N-Channel MOSFET Transistor 2SK2850 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB