FDV304P - описание и поиск аналогов

 ..1. Size:46K  fairchild semi
 fdv304p d87z fdv304p nb8u003.pdf 

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 ..2. Size:63K  fairchild semi
 fdv304p.pdf 

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 ..3. Size:67K  onsemi
 fdv304p.pdf 

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 ..4. Size:1509K  cn vbsemi
 fdv304p.pdf 

FDV304P www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 9.1. Size:47K  fairchild semi
 fdv303n nb9u008.pdf 

August 1997 FDV303N Digital FET, N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These N-Channel enhancement mode field effect transistors are RDS(ON) = 0.45 @ VGS = 4.5 V produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize RDS(ON) = 0.6 @ VGS= 2.7 V. on-state resistanc

 9.2. Size:173K  fairchild semi
 fdv301n d87z fdv301n nb9v005.pdf 

June 2009 FDV301N Digital FET , N-Channel General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. This N-Channel logic level enhancement mode field effect RDS(ON) = 5 @ VGS= 2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 4 @ VGS= 4.5 V. especially tailored to minimize on-

 9.3. Size:172K  fairchild semi
 fdv305n.pdf 

January 2003 FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild s high 0.9 A, 20 V RDS(ON) = 220 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 300 m @ VGS = 2.5 V power management applications. Low gate charge Applications Fast switching speed Load s

 9.4. Size:65K  fairchild semi
 fdv303n.pdf 

August 1997 FDV303N Digital FET, N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These N-Channel enhancement mode field effect transistors are RDS(ON) = 0.45 @ VGS = 4.5 V produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize RDS(ON) = 0.6 @ VGS= 2.7 V. on-state resistanc

 9.5. Size:63K  fairchild semi
 fdv302p.pdf 

October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t

 9.6. Size:46K  fairchild semi
 fdv302p d87z fdv302p nb8v001.pdf 

October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t

 9.7. Size:213K  fairchild semi
 fdv301n.pdf 

June 2009 FDV301N Digital FET , N-Channel General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. This N-Channel logic level enhancement mode field effect RDS(ON) = 5 @ VGS= 2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 4 @ VGS= 4.5 V. especially tailored to minimize on-

 9.8. Size:289K  onsemi
 fdv305n.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:165K  onsemi
 fdv302p.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 9.10. Size:213K  onsemi
 fdv301n.pdf 

June 2009 FDV301N Digital FET , N-Channel General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. This N-Channel logic level enhancement mode field effect RDS(ON) = 5 @ VGS= 2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 4 @ VGS= 4.5 V. especially tailored to minimize on-

 9.11. Size:1238K  kexin
 fdv303n.pdf 

SMD Type MOSFET N-Channel MOSFET FDV303N (KDV303N) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 25V ID = 0.68 A 1 2 RDS(ON) 450m (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 600m (VGS = 2.7V) 1.9-0.1 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dra

 9.12. Size:1245K  kexin
 fdv303n-3.pdf 

SMD Type MOSFET N-Channel MOSFET FDV303N (KDV303N) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 25V ID = 0.68 A 1 2 RDS(ON) 450m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 600m (VGS = 2.7V) 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.13. Size:1797K  kexin
 fdv301n.pdf 

N-Channel MOSFET FDV301N SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1. Gate 2. Source 3. Drain 0.4 +0.1 +0.1 2.4 -0.1 1.3 -0.1 0.55 +0.1 0.97 -0.1 +0.1 0-0.1 0.38 -0.1 N-Channel MOSFET FDV301N Marking Marking 301 SMD Type MOSFET N-Channel MOSFET FDV301N Typical Characterisitics 1.4 0.5 V GS = 4

 9.14. Size:2795K  slkor
 fdv301n.pdf 

FDV301N N-Channel MOSFET 3 2 1. Gate 2. Source 1 3. Drain Simplified outline(SOT-23) www.slkormicro.com 1 FDV301N www.slkormicro.com 2 FDV301N Typical Characterisitics 1.4 0.5 V GS = 4.5V 4.0 3.5 VG S = 2.0V 0.4 3 .0 1.2 2 .7 2.5 2.5 0.3 2 .7 1 3.0 0.2 2 .0 3 .5 4 .0 0.8 4 .5 0.1 1.5 0 0.6 0 0 .5 1 1.5 2 2.5 3 0 0 .1 0 .2 0 .3 0 .4 0.5 V , DRAIN

 9.15. Size:546K  cn shikues
 fdv303n.pdf 

FDV303N N-Channel Enhancement Mode MOSFET Feature 20V/2A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management SOT-23 Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=

 9.16. Size:2319K  cn vbsemi
 fdv303n.pdf 

FDV303N www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

 9.17. Size:2320K  cn vbsemi
 fdv301n.pdf 

FDV301N www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C