Ordering number:EN850EN-Channel Junction Silicon FET2SK304Low-Frequency Amplifier ApplicationsFeatures Package Dimensions Ideal for potentiometers, analog switches, lowunit:mmfrequency amplifiers, and constant-current regula-2034Ators.[2SK304]2.24.00.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.0SANYO : SPA3.8nomSpecificationsAbsolute

Power F-MOS FETs2SK3042Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 45mJunit: mm High-speed switching: tf = 30ns4.60.29.90.32.90.2 No secondary breakdown 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment 1.40.22.60.11.60.2 Switching powe

Power F-MOS FETs2SK3049Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteedunit: mm High-speed switching4.60.29.90.32.90.2 Low ON-resistance No secondary breakdown 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.40.22.60.11.60.2 Control equipment Switching power s

Power F-MOS FETs2SK3046Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 130mJunit: mm VGSS = 30V guaranteed4.60.2 High-speed switching: tf = 60ns9.90.32.90.2 No secondary breakdown Applications 3.20.1 Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.40.22.60.11.60.2 Control

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3048Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed High-speed switching 3.20.1 Low on-resistance No secondary breakdown Applications Non-contact relay1.40.2 Solenoid drive 2.60.11.60.2

Power MOSFETs2SK3047Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 15 mJ Gate-source surrender voltage VGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact relay1.40.2 Solenoid drive 2.60.11.60.2 Motor dri

Power MOSFETs2SK3045Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 15.6 mJ Gate-source surrender voltage VGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact relay1.40.2 Solenoid drive 2.60.11.60.2 Motor d

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3043Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 100 mJ Gate-source surrender voltage VGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact rela

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3044Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 130 mJ Gate-source surrender voltageVGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact relay

isc N-Channel MOSFET Transistor 2SK3049FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3042FEATURESDrain Current : I =7A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R =0.6(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3046FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3048FEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3047FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 7(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3045FEATURESDrain Current : I = 2.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3043FEATURESDrain Current : I =5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3044FEATURESDrain Current : I =7A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R =0.75(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d