AP02N60H-H. Аналоги и основные параметры
Наименование производителя: AP02N60H-H
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 27 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 8.8 Ohm
Тип корпуса: TO252
Аналог (замена) для AP02N60H-H
- подборⓘ MOSFET транзистора по параметрам
AP02N60H-H даташит
ap02n60h-h ap02n60j-h.pdf
AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications
ap02n60h-h-hf ap02n60j-h-hf.pdf
AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and
ap02n60h-hf ap02n60j-hf.pdf
AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC
ap02n60h ap02n60j.pdf
AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th
Другие MOSFET... AP01N60P , AP0203GMT-HF , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , 20N50 , AP02N60I , AP02N60I-A-HF , AP02N60J , AP02N60J-H , AP02N60P-A-HF , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ .
History: SWD051R08ES | AP9970GW | IXFT50N85XHV
History: SWD051R08ES | AP9970GW | IXFT50N85XHV
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Список транзисторов
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