Справочник MOSFET. AP02N60J

 

AP02N60J Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP02N60J
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для AP02N60J

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP02N60J Datasheet (PDF)

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AP02N60J

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

 0.1. Size:246K  ape
ap02n60h-h ap02n60j-h.pdfpdf_icon

AP02N60J

AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications

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ap02n60h-h-hf ap02n60j-h-hf.pdfpdf_icon

AP02N60J

AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

 0.3. Size:98K  ape
ap02n60h-hf ap02n60j-hf.pdfpdf_icon

AP02N60J

AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC

Другие MOSFET... AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , IRF2807 , AP02N60J-H , AP02N60P-A-HF , AP02N60T-H-HF , AP02N70EI-HF , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF .

History: RSJ450N04 | SWN10N80K2 | 2SK2771-01R | BLP065N10GL-P | AP9685GM-HF | DH065N04

 

 
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