AP02N90H-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP02N90H-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 62.5 W
Предельно допустимое напряжение сток-исток |Uds|: 900 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 1.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 7.2 Ohm
Тип корпуса: TO252
Аналог (замена) для AP02N90H-HF
AP02N90H-HF Datasheet (PDF)
ap02n90h-hf ap02n90j-hf.pdf
AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D
ap02n90h.pdf
AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap02n90i.pdf
AP02N90IPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS compliantSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device is suited for s
ap02n90p-hf.pdf
AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching
ap02n90p.pdf
AP02N90P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGD TO-220DSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve
ap02n90jb.pdf
AP02N90JBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900VD Fast Switching Characteristic RDS(ON) 7.2 Simple Drive Requirement ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap02n90i-hf.pdf
AP02N90I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is universally preferred for all commercial-industrial applications. The device
ap02n90j.pdf
AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: HFD1N60F
