Справочник MOSFET. AP0403GH-HF

 

AP0403GH-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP0403GH-HF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 44.6 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 75 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 16.5 nC
   Время нарастания (tr): 81 ns
   Выходная емкость (Cd): 450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP0403GH-HF

 

 

AP0403GH-HF Datasheet (PDF)

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 ap0403gh-hf.pdf

AP0403GH-HF AP0403GH-HF

AP0403GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, rugge

 6.1. Size:143K  ape
 ap0403gh.pdf

AP0403GH-HF AP0403GH-HF

AP0403GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desi

 6.2. Size:837K  cn vbsemi
 ap0403gh.pdf

AP0403GH-HF AP0403GH-HF

AP0403GHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSO

 7.1. Size:167K  ape
 ap0403gm.pdf

AP0403GH-HF AP0403GH-HF

AP0403GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 4.5mD Fast Switching Characteristic ID 18.7AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAP0403 series are from

 7.2. Size:90K  ape
 ap0403gm-hf.pdf

AP0403GH-HF AP0403GH-HF

AP0403GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 4.5mD Fast Switching Characteristic ID 18.7AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

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