Справочник MOSFET. 2SJ417

 

2SJ417 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ417
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TP

 Аналог (замена) для 2SJ417

 

 

2SJ417 Datasheet (PDF)

 ..1. Size:131K  sanyo
 2sj417.pdf

2SJ417 2SJ417

Ordering number:EN5267P-Channel Silicon MOSFET2SJ417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ417]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ417]6.5 2.35.0 0.540.5

 9.1. Size:189K  toshiba
 2sj412.pdf

2SJ417 2SJ417

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode:

 9.2. Size:127K  sanyo
 2sj418.pdf

2SJ417 2SJ417

Ordering number:ENN5298AP-Channel Silicon MOSFET2SJ418Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ418]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ418]6.5 2.35.0 0.540.5

 9.3. Size:79K  sanyo
 2sj413.pdf

2SJ417 2SJ417

Ordering number:ENN5366AP-Channel Silicon MOSFET2SJ413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2076B Low-voltage drive.[2SJ413] Micaless package facilitating mounting.16.05.63.43.12.82.0 2.01.00.61 2 31 : Gate2 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLSpeci

 9.4. Size:411K  sanyo
 2sj416.pdf

2SJ417 2SJ417

No. N 5 2 6 62SJ416No. 526 652599 P MOS 2SJ416 4V Absolute Maximum Ratings / Ta=25 unit VDSS 30 V VGSS 20 V

 9.5. Size:100K  sanyo
 2sj419.pdf

2SJ417 2SJ417

Ordering number:EN5313AP-Channel Silicon MOSFET2SJ419Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SJ419]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim

 9.6. Size:1111K  renesas
 2sj410.pdf

2SJ417 2SJ417

2SJ410Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00Jun 05, 2006 DescriptionHigh speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver OutlineRENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG

 9.7. Size:69K  nec
 2sj411.pdf

2SJ417 2SJ417

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ411P-CHANNEL SIGNAL MOS FETFOR SWITCHINGThe 2SJ411 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)7.0 MAX. 1.2a switching element that can be directly driven by the output of anIC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for power control switche

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top