Справочник MOSFET. 2SK3280

 

2SK3280 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3280
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 210 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TP

 Аналог (замена) для 2SK3280

 

 

2SK3280 Datasheet (PDF)

 ..1. Size:45K  sanyo
2sk3280.pdf

2SK3280
2SK3280

Ordering number:ENN6436N-Channel Silicon MOSFET2SK3280DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 4V drive.2083B Ultrahigh-speed switching.[2SK3280]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3280]6.5 2.35.0 0.540.50.851

 8.1. Size:48K  sanyo
2sk3285.pdf

2SK3280
2SK3280

Ordering number:ENN6358N-Channel Silicon MOSFET2SK3285DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2093A[2SK3285]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2169[2SK3285]4.510.21.31 2 31.20.82.55 2.550.41 : Gate2 : Drain3 : Source2.55 2.55

 8.2. Size:34K  sanyo
2sk3284.pdf

2SK3280
2SK3280

Ordering number : ENA01682SK3284N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3284ApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 10 ADra

 8.3. Size:23K  sanyo
2sk3283.pdf

2SK3280
2SK3280

Ordering number : ENN66002SK3283N-Channel Silicon MOSFET2SK3283Load S/W ApplicationsPreliminaryFeatures Package Dimensions Low ON resistance. unit : mm 4V-drive. 2083B[2SK3283]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3283]6.5 2.35.0 0.540.50.851 2 30.61

 8.4. Size:91K  renesas
2sk3288entl.pdf

2SK3280
2SK3280

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:56K  renesas
2sk3288.pdf

2SK3280
2SK3280

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.6. Size:42K  renesas
2sk3289.pdf

2SK3280
2SK3280

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.7. Size:57K  renesas
2sk3287.pdf

2SK3280
2SK3280

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.8. Size:283K  inchange semiconductor
2sk3285k.pdf

2SK3280
2SK3280

isc N-Channel MOSFET Transistor 2SK3285KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.9. Size:357K  inchange semiconductor
2sk3285b.pdf

2SK3280
2SK3280

isc N-Channel MOSFET Transistor 2SK3285BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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