AP0904GYT-HF - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP0904GYT-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.57 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 200 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
Тип корпуса: PMPAK3X3
Аналог (замена) для AP0904GYT-HF
AP0904GYT-HF Datasheet (PDF)
ap0904gyt-hf.pdf

AP0904GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VD Small Size & Lower Profile RDS(ON) 11.5m RoHS Compliant & Halogen-Free ID 13.5AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device d
ap0904gh-hf ap0904gj-hf.pdf

AP0904GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast
ap0904gh.pdf

AP0904GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionGAP0904 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to ac
ap0904gp-hf.pdf

AP0904GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAP0904 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
Другие MOSFET... AP08P20GS-HF , AP0903GH-HF , AP0903GM-HF , AP0903GYT-HF , AP0904GH-HF , AP0904GJB-HF , AP0904GJ-HF , AP0904GMT-HF , 7N60 , AP09N20BGH-HF , AP09N20BGI-HF , AP09N20BGP-HF , AP09N20H-HF , AP09N20J-HF , AP09N50I , AP09N50I-HF , AP09N50P-HF .
History: TPD65R1K5M | JFFC13N65C | IRF7473
History: TPD65R1K5M | JFFC13N65C | IRF7473



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