AP09N20BGP-HF - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP09N20BGP-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
Тип корпуса: TO220
Аналог (замена) для AP09N20BGP-HF
AP09N20BGP-HF Datasheet (PDF)
ap09n20bgp-hf.pdf

AP09N20BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GT
ap09n20bgh-hf.pdf

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f
ap09n20bgh.pdf

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated design andGsilicon process technology to achieve th
ap09n20bgs-hf.pdf

AP09N20BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated designand silicon process technology to achieve the l
Другие MOSFET... AP0903GYT-HF , AP0904GH-HF , AP0904GJB-HF , AP0904GJ-HF , AP0904GMT-HF , AP0904GYT-HF , AP09N20BGH-HF , AP09N20BGI-HF , IRF520 , AP09N20H-HF , AP09N20J-HF , AP09N50I , AP09N50I-HF , AP09N50P-HF , AP09N70I-A , AP09N70I-A-HF , AP09N70I-H-HF .
History: HFB1N60S | AP09N70R-A-HF | AP09T10GH-HF
History: HFB1N60S | AP09N70R-A-HF | AP09T10GH-HF



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