AP09N70I-A-HF. Аналоги и основные параметры
Наименование производителя: AP09N70I-A-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP09N70I-A-HF
- подборⓘ MOSFET транзистора по параметрам
AP09N70I-A-HF даташит
ap09n70i-a-hf.pdf
AP09N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res
ap09n70i-a.pdf
AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe
ap09n70i-h-hf.pdf
AP09N70I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg
ap09n70r-a.pdf
AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance an
Другие IGBT... AP09N20BGI-HF, AP09N20BGP-HF, AP09N20H-HF, AP09N20J-HF, AP09N50I, AP09N50I-HF, AP09N50P-HF, AP09N70I-A, IRFZ46N, AP09N70I-H-HF, AP09N70R-H, AP09N70P-H, AP09N70P-A, AP09N70R, AP09N70R-A-HF, AP09N90CW-HF, AP09N90W
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Список транзисторов
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