AP09N70I-H-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP09N70I-H-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 170 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP09N70I-H-HF
AP09N70I-H-HF Datasheet (PDF)
ap09n70i-h-hf.pdf

AP09N70I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg
ap09n70i-a.pdf

AP09N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe
ap09n70i-a-hf.pdf

AP09N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res
ap09n70r-a.pdf

AP09N70R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAP09N70 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance an
Другие MOSFET... AP09N20BGP-HF , AP09N20H-HF , AP09N20J-HF , AP09N50I , AP09N50I-HF , AP09N50P-HF , AP09N70I-A , AP09N70I-A-HF , IRF1405 , AP09N70R-H , AP09N70P-H , AP09N70P-A , AP09N70R , AP09N70R-A-HF , AP09N90CW-HF , AP09N90W , AP09T10GH-HF .
History: DMN3190LDW | MDV1525URH | BUK6D120-60P | TPCA8104 | 2SJ132-Z | IPA126N10N3G | 2SK1437
History: DMN3190LDW | MDV1525URH | BUK6D120-60P | TPCA8104 | 2SJ132-Z | IPA126N10N3G | 2SK1437



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