AP09N70R-A-HF. Аналоги и основные параметры
Наименование производителя: AP09N70R-A-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: TO262
Аналог (замена) для AP09N70R-A-HF
- подборⓘ MOSFET транзистора по параметрам
AP09N70R-A-HF даташит
ap09n70r-a-hf.pdf
AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D D Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G G RoHS Compliant S S Description AP09N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications.
ap09n70r-a.pdf
AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance an
ap09n70r.pdf
AP09N70R RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 600V D D Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G G S S Description AP09N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications.The TO-262 type provi
ap09n70i-a.pdf
AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe
Другие IGBT... AP09N50P-HF, AP09N70I-A, AP09N70I-A-HF, AP09N70I-H-HF, AP09N70R-H, AP09N70P-H, AP09N70P-A, AP09N70R, K2611, AP09N90CW-HF, AP09N90W, AP09T10GH-HF, AP09T10GK-HF, AP09T10GP-HF, AP1001BSQ, AP1002BMX, AP10N60W
History: QM3002ANA
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg | s9015 transistor | irf540z









