AP18T10GI. Аналоги и основные параметры

Наименование производителя: AP18T10GI

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 55 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm

Тип корпуса: TO220F

Аналог (замена) для AP18T10GI

- подборⓘ MOSFET транзистора по параметрам

 

AP18T10GI даташит

 ..1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T10GI

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100V D Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 6.1. Size:97K  ape
 ap18t10gh j-hf.pdf pdf_icon

AP18T10GI

AP18T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combinatio

 6.2. Size:96K  ape
 ap18t10gh ap18t10gj.pdf pdf_icon

AP18T10GI

AP18T10GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

 6.3. Size:94K  ape
 ap18t10gp.pdf pdf_icon

AP18T10GI

AP18T10GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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