2SK3775-01. Аналоги и основные параметры
Наименование производителя: 2SK3775-01
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 32 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 7.5 ns
Cossⓘ - Выходная емкость: 335 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: NA
Аналог (замена) для 2SK3775-01
- подборⓘ MOSFET транзистора по параметрам
2SK3775-01 даташит
7.1. Size:93K fuji
2sk3775.pdf 
2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings (mm) 200406 Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) F o o t P r i n t DC-DC converters Equivalent circuit schematic Maximum ratings and characteristic
8.2. Size:106K fuji
2sk3773-01mr.pdf 
2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
8.3. Size:146K fuji
2sk3774-01l-s-sj.pdf 
2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T
8.4. Size:106K fuji
2sk3778.pdf 
2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherw
8.5. Size:103K fuji
2sk3777.pdf 
2SK3777-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless ot
8.6. Size:105K fuji
2sk3778-01.pdf 
2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other
8.7. Size:96K fuji
2sk3771-01mr.pdf 
2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
8.8. Size:92K fuji
2sk3770-01mr.pdf 
2SK3770-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
8.9. Size:105K fuji
2sk3772-01.pdf 
2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
8.10. Size:105K fuji
2sk3776-01.pdf 
2SK3776-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other
8.11. Size:103K fuji
2sk3779.pdf 
2SK3779-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless ot
8.12. Size:283K inchange semiconductor
2sk3774-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3774-01L FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.13. Size:357K inchange semiconductor
2sk3774-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3774-01S FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.14. Size:372K inchange semiconductor
2sk3778-01.pdf 
isc N-Channel MOSFET Transistor 2SK3778-01 FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 53m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.15. Size:274K inchange semiconductor
2sk3779-01r.pdf 
isc N-Channel MOSFET Transistor 2SK3779-01R FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 53m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.16. Size:289K inchange semiconductor
2sk3772-01.pdf 
isc N-Channel MOSFET Transistor 2SK3772-01 FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.17. Size:357K inchange semiconductor
2sk3774-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3774-01SJ FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
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