Справочник MOSFET. AP20T03GJ-HF

 

AP20T03GJ-HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP20T03GJ-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 12.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

AP20T03GJ-HF Datasheet (PDF)

 5.1. Size:202K  ape
ap20t03gj.pdfpdf_icon

AP20T03GJ-HF

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-

 6.1. Size:92K  ape
ap20t03ghj-hf.pdfpdf_icon

AP20T03GJ-HF

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and

 6.2. Size:122K  ape
ap20t03gt-hf.pdfpdf_icon

AP20T03GJ-HF

AP20T03GT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,

 6.3. Size:238K  ape
ap20t03gh.pdfpdf_icon

AP20T03GJ-HF

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI9410BDY | IPP052N08N5 | 2SK3572-Z | FIR40N15LG | WFF2N65B | 2SK3150L | APT5026HVR

 

 
Back to Top

 


 
.