AP20T03GJ-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP20T03GJ-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 12.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO251
- подбор MOSFET транзистора по параметрам
AP20T03GJ-HF Datasheet (PDF)
ap20t03gj.pdf

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
ap20t03ghj-hf.pdf

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and
ap20t03gt-hf.pdf

AP20T03GT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,
ap20t03gh.pdf

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SI9410BDY | IPP052N08N5 | 2SK3572-Z | FIR40N15LG | WFF2N65B | 2SK3150L | APT5026HVR
History: SI9410BDY | IPP052N08N5 | 2SK3572-Z | FIR40N15LG | WFF2N65B | 2SK3150L | APT5026HVR



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