Справочник MOSFET. 2SK385

 

2SK385 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK385
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
   Тип корпуса: 2-21F1B

 Аналог (замена) для 2SK385

 

 

2SK385 Datasheet (PDF)

 ..1. Size:41K  no
 2sk385.pdf

2SK385

 ..2. Size:233K  inchange semiconductor
 2sk385.pdf

2SK385 2SK385

isc N-Channel MOSFET Transistor 2SK385DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed power Switching.Low leakage Current.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE

 0.1. Size:129K  toshiba
 2sk3857tk.pdf

2SK385 2SK385

2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 13Characteristic Symbol Rating Unit2Gate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storag

 0.2. Size:148K  toshiba
 2sk3857tv.pdf

2SK385 2SK385

2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora

 0.3. Size:36K  sanyo
 2sk3850.pdf

2SK385 2SK385

Ordering number : ENN8193 2SK3850N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3850ApplicationsFeatures Best suited for motor drive. Low ON-resistance. Low Qg.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 0.7 AD

 0.4. Size:354K  inchange semiconductor
 2sk3850i.pdf

2SK385 2SK385

isc N-Channel MOSFET Transistor 2SK3850IFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 0.5. Size:286K  inchange semiconductor
 2sk3850d.pdf

2SK385 2SK385

isc N-Channel MOSFET Transistor 2SK3850DFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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