Справочник MOSFET. AP2332GN-HF

 

AP2332GN-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP2332GN-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.027 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.5 nC
   trⓘ - Время нарастания: 14.5 ns
   Cossⓘ - Выходная емкость: 10 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 300 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для AP2332GN-HF

 

 

AP2332GN-HF Datasheet (PDF)

 ..1. Size:91K  ape
 ap2332gn-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2332GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 300 Surface Mount Device ID 27mAS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possibl

 7.1. Size:56K  ape
 ap2332gen-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2332GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 Surface Mount Device ID 51mAS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processingGtechniques to achieve the lowest possibl

 9.1. Size:175K  ape
 ap2330gn.pdf

AP2332GN-HF AP2332GN-HF

AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAP2330 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

 9.2. Size:93K  ape
 ap2336gn-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2336GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext

 9.3. Size:177K  ape
 ap2338gn.pdf

AP2332GN-HF AP2332GN-HF

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2338 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.4. Size:59K  ape
 ap2331gn-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2331GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 0.8 Surface Mount Device ID - 1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP2331 series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

 9.5. Size:57K  ape
 ap2333en-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2333EN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -2.9AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2333 series are from Advanced Power innovated design andGsilicon process technology to achiev

 9.6. Size:93K  ape
 ap2330gn-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toSachieve the lowest possible on-resistance,

 9.7. Size:95K  ape
 ap2338gn-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on

 9.8. Size:57K  ape
 ap2334gn-hf.pdf

AP2332GN-HF AP2332GN-HF

AP2334GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 5.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top