Справочник MOSFET. AP2342GK-HF

 

AP2342GK-HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP2342GK-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.59 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

AP2342GK-HF Datasheet (PDF)

 ..1. Size:61K  ape
ap2342gk-hf.pdfpdf_icon

AP2342GK-HF

AP2342GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 2S Fast Switching Characteristic ID 590mAD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast swit

 9.1. Size:57K  ape
ap2344gen-hf.pdfpdf_icon

AP2342GK-HF

AP2344GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 23m Fast Switching Performance ID 6.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconGprocess technology to achiev

 9.2. Size:55K  ape
ap2346gn-hf.pdfpdf_icon

AP2342GK-HF

AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th

 9.3. Size:55K  ape
ap2344gn-hf.pdfpdf_icon

AP2342GK-HF

AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th

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History: APM7314 | WMK18N50C4 | NTMFD5C650NLT1G | SSM2605GY | SFP350N100C2 | MMD80R1K2PRH | IXTT360N055T2

 

 
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