AP25N10GJ-HF - описание и поиск аналогов

 

AP25N10GJ-HF - Аналоги. Основные параметры


   Наименование производителя: AP25N10GJ-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для AP25N10GJ-HF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP25N10GJ-HF технические параметры

 ..1. Size:100K  ape
 ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

AP25N10GJ-HF

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design

 6.1. Size:238K  ape
 ap25n10gh.pdf pdf_icon

AP25N10GJ-HF

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S

 6.2. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

AP25N10GJ-HF

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220

 7.1. Size:746K  ncepower
 nceap25n10ak.pdf pdf_icon

AP25N10GJ-HF

http //www.ncepower.com NCEAP25N10AK NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , AP2532GY , AP2533GY-HF , AP2535GEY-HF , AP25N10GH-HF , K4145 , AP25N10GP-HF , AP25N10GS-HF , AP25P15GI , AP25P15GS-HF , AP2602GY , AP2603GY-HF , AP2604GY-HF , AP2605GY .

History: APT80M60J

 

 
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