AP2608AGY-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP2608AGY-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.78 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5 nC
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 20 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: SOT26
Аналог (замена) для AP2608AGY-HF
AP2608AGY-HF Datasheet (PDF)
ap2608agy-hf.pdf
AP2608AGY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Small Footprint & Low Profile Package ID 0.78AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve
ap2608agk-hf.pdf
AP2608AGK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Fast Switching Characteristic ID 0.92AG Halogen Free & RoHS Compliant ProductSDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theSbest combination of fast switc
ap2608gy.pdf
AP2608GYRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 150VD Lower Gate Charge RDS(ON) 2.6D Small Footprint & Low Profile Package ID 0.57AGDSOT-26 DDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible on-resistance, ex
ap2607agy-hf.pdf
AP2607AGY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible
ap2605gy-hf.pdf
AP2605GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30VS Lower Gate Charge RDS(ON) 80mDD Small Footprint & Low Profile Package ID - 4AG RoHS CompliantDSOT-26DDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possi
ap2609gyt.pdf
AP2609GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer withDthe best combination of fast switching, ruggedized device de
ap2604gy.pdf
AP2604GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 45mG Small Footprint & Low Profile Package ID 5.5ADSOT-26 DDDescriptionAP2604 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest poss
ap2602gy-hf.pdf
AP2602GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VDD Lower On-resistance RDS(ON) 34mG Surface Mount Package ID 6.3AD RoHS Compliant & Halogen-Free SOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible o
ap2607gy-hf.pdf
AP2607GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible o
ap2609gyt-hf.pdf
AP2609GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device d
ap2609gy-hf.pdf
AP2609GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 57mG Surface Mount Device ID - 5.1AD RoHS Compliant & Halogen-FreeSOT-26 DDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast swit
ap2605gy.pdf
AP2605GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30VS Lower Gate Charge RDS(ON) 80mDD Small Footprint & Low Profile Package ID - 4AG RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP2605 series are from Advanced Power innovated design and siliconDprocess
ap2602mt.pdf
AP2602MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Ultra Low On-resistance ID4 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP2602 series are from Advanced Power innovated design andsilicon process technology to ac
ap2606agy-hf.pdf
AP2606AGY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the
ap2606cmt.pdf
AP2606CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD SO-8 Compatible with Heatsink RDS(ON) 0.8m Ultra Low On-resistance ID4 280AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP2606C series are from Advanced Power innovated design andsilicon process technology to a
ap2604cdt.pdf
AP2604CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD 100% Rg & UIS Test RDS(ON) 0.65m Ultra Low On-resistance ID4 375AG RoHS Compliant & Halogen-FreeSPDFN 5x6DescriptionD D D DAP2604C series are from Advanced Power innovateddesign and silicon process technology to achi
ap2606gy-hf.pdf
AP2606GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7AGD RoHS CompliantDSOT-26DescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible
ap2603gy.pdf
AP2603GYPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VSD Small Package Outline RDS(ON) 65mD Surface Mount Device ID -5.0AGDSOT-26 DDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible on-resistance, extremely efficient
ap2605gy0-hf.pdf
AP2605GY0-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID -4AG RoHS Compliant & Halogen-FreeSSDDescriptionDAdvanced Power MOSFETs uti
ap2603gy-hf.pdf
AP2603GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 65mG Surface Mount Device ID -5ADSOT-26 D RoHS Compliant & Halogen-FreeDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o
ap2604gy-hf.pdf
AP2604GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VSD Lower Gate Charge RDS(ON) 45mD Small Footprint & Low Profile Package ID 5.5AGDSOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext
ap2602gy.pdf
AP2602GYRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VSD Lower on-resistance RDS(ON) 34mD Surface mount package ID 6.3AGDSOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible on-resistance, extremely efficien
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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