AP2608GY - описание и поиск аналогов

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 ap2608gy.pdf 

AP2608GY RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 150V D Lower Gate Charge RDS(ON) 2.6 D Small Footprint & Low Profile Package ID 0.57A G D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ex

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 ap2608agy-hf.pdf 

AP2608AGY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Small Footprint & Low Profile Package ID 0.78A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve

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 ap2608agk-hf.pdf 

AP2608AGK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Fast Switching Characteristic ID 0.92A G Halogen Free & RoHS Compliant Product S D Description Advanced Power MOSFETs from APEC provide the designer with the S best combination of fast switc

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 ap2607agy-hf.pdf 

AP2607AGY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible

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 ap2605gy-hf.pdf 

AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possi

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 ap2609gyt.pdf 

AP2609GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device de

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 ap2604gy.pdf 

AP2604GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 30V D D Lower Gate Charge RDS(ON) 45m G Small Footprint & Low Profile Package ID 5.5A D SOT-26 D D Description AP2604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss

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 ap2602gy-hf.pdf 

AP2602GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D D Lower On-resistance RDS(ON) 34m G Surface Mount Package ID 6.3A D RoHS Compliant & Halogen-Free SOT-26 D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

 9.6. Size:95K  ape
 ap2607gy-hf.pdf 

AP2607GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible o

 9.7. Size:58K  ape
 ap2609gyt-hf.pdf 

AP2609GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device d

 9.8. Size:59K  ape
 ap2609gy-hf.pdf 

AP2609GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 57m G Surface Mount Device ID - 5.1A D RoHS Compliant & Halogen-Free SOT-26 D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swit

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 ap2605gy.pdf 

AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant & Halogen-Free D SOT-26 D Description AP2605 series are from Advanced Power innovated design and silicon D process

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 ap2602mt.pdf 

AP2602MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D SO-8 Compatible with Heatsink RDS(ON) 0.99m Ultra Low On-resistance ID4 260A G RoHS Compliant & Halogen-Free D S D D Description D AP2602 series are from Advanced Power innovated design and silicon process technology to ac

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 ap2606agy-hf.pdf 

AP2606AGY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 30V D D Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7A G D RoHS Compliant & Halogen-Free D SOT-26 Description Advanced Power MOSFETs utilized advanced processing techniques D to achieve the

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 ap2606cmt.pdf 

AP2606CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D SO-8 Compatible with Heatsink RDS(ON) 0.8m Ultra Low On-resistance ID4 280A G RoHS Compliant & Halogen-Free D S D D Description D AP2606C series are from Advanced Power innovated design and silicon process technology to a

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 ap2604cdt.pdf 

AP2604CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D 100% Rg & UIS Test RDS(ON) 0.65m Ultra Low On-resistance ID4 375A G RoHS Compliant & Halogen-Free S PDFN 5x6 Description D D D D AP2604C series are from Advanced Power innovated design and silicon process technology to achi

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 ap2606gy-hf.pdf 

AP2606GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 30V D D Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7A G D RoHS Compliant D SOT-26 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible

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 ap2603gy.pdf 

AP2603GY Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V S D Small Package Outline RDS(ON) 65m D Surface Mount Device ID -5.0A G D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

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 ap2605gy0-hf.pdf 

AP2605GY0-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID -4A G RoHS Compliant & Halogen-Free S S D Description D Advanced Power MOSFETs uti

 9.17. Size:58K  ape
 ap2603gy-hf.pdf 

AP2603GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 65m G Surface Mount Device ID -5A D SOT-26 D RoHS Compliant & Halogen-Free D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

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 ap2604gy-hf.pdf 

AP2604GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30V S D Lower Gate Charge RDS(ON) 45m D Small Footprint & Low Profile Package ID 5.5A G D SOT-26 D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext

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 ap2602gy.pdf 

AP2602GY RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V S D Lower on-resistance RDS(ON) 34m D Surface mount package ID 6.3A G D SOT-26 D D Description Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible on-resistance, extremely efficien

 9.20. Size:1368K  cn apm
 ap260n12tlg1.pdf 

AP260N12TLG1 120V N-Channel Enhancement Mode MOSFET Description The AP260N12TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =260A DS D R