AP2609GYT-HF. Аналоги и основные параметры
Наименование производителя: AP2609GYT-HF
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 3.57 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 305 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: PMPAK3X3
Аналог (замена) для AP2609GYT-HF
- подборⓘ MOSFET транзистора по параметрам
AP2609GYT-HF даташит
..1. Size:58K ape
ap2609gyt-hf.pdf 
AP2609GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device d
5.1. Size:115K ape
ap2609gyt.pdf 
AP2609GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device de
6.1. Size:59K ape
ap2609gy-hf.pdf 
AP2609GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 57m G Surface Mount Device ID - 5.1A D RoHS Compliant & Halogen-Free SOT-26 D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swit
9.1. Size:95K ape
ap2607agy-hf.pdf 
AP2607AGY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible
9.2. Size:130K ape
ap2605gy-hf.pdf 
AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possi
9.3. Size:201K ape
ap2604gy.pdf 
AP2604GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 30V D D Lower Gate Charge RDS(ON) 45m G Small Footprint & Low Profile Package ID 5.5A D SOT-26 D D Description AP2604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss
9.4. Size:58K ape
ap2608gy.pdf 
AP2608GY RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 150V D Lower Gate Charge RDS(ON) 2.6 D Small Footprint & Low Profile Package ID 0.57A G D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ex
9.5. Size:60K ape
ap2602gy-hf.pdf 
AP2602GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D D Lower On-resistance RDS(ON) 34m G Surface Mount Package ID 6.3A D RoHS Compliant & Halogen-Free SOT-26 D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o
9.6. Size:95K ape
ap2607gy-hf.pdf 
AP2607GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible o
9.7. Size:207K ape
ap2605gy.pdf 
AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant & Halogen-Free D SOT-26 D Description AP2605 series are from Advanced Power innovated design and silicon D process
9.8. Size:164K ape
ap2602mt.pdf 
AP2602MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D SO-8 Compatible with Heatsink RDS(ON) 0.99m Ultra Low On-resistance ID4 260A G RoHS Compliant & Halogen-Free D S D D Description D AP2602 series are from Advanced Power innovated design and silicon process technology to ac
9.9. Size:95K ape
ap2606agy-hf.pdf 
AP2606AGY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 30V D D Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7A G D RoHS Compliant & Halogen-Free D SOT-26 Description Advanced Power MOSFETs utilized advanced processing techniques D to achieve the
9.10. Size:163K ape
ap2606cmt.pdf 
AP2606CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D SO-8 Compatible with Heatsink RDS(ON) 0.8m Ultra Low On-resistance ID4 280A G RoHS Compliant & Halogen-Free D S D D Description D AP2606C series are from Advanced Power innovated design and silicon process technology to a
9.11. Size:137K ape
ap2604cdt.pdf 
AP2604CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D 100% Rg & UIS Test RDS(ON) 0.65m Ultra Low On-resistance ID4 375A G RoHS Compliant & Halogen-Free S PDFN 5x6 Description D D D D AP2604C series are from Advanced Power innovated design and silicon process technology to achi
9.12. Size:89K ape
ap2606gy-hf.pdf 
AP2606GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Fast Switching Characteristic BVDSS 30V D D Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 7A G D RoHS Compliant D SOT-26 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible
9.13. Size:60K ape
ap2603gy.pdf 
AP2603GY Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V S D Small Package Outline RDS(ON) 65m D Surface Mount Device ID -5.0A G D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient
9.14. Size:57K ape
ap2608agy-hf.pdf 
AP2608AGY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Small Footprint & Low Profile Package ID 0.78A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve
9.15. Size:55K ape
ap2605gy0-hf.pdf 
AP2605GY0-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID -4A G RoHS Compliant & Halogen-Free S S D Description D Advanced Power MOSFETs uti
9.16. Size:58K ape
ap2603gy-hf.pdf 
AP2603GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 65m G Surface Mount Device ID -5A D SOT-26 D RoHS Compliant & Halogen-Free D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o
9.17. Size:96K ape
ap2604gy-hf.pdf 
AP2604GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30V S D Lower Gate Charge RDS(ON) 45m D Small Footprint & Low Profile Package ID 5.5A G D SOT-26 D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext
9.18. Size:90K ape
ap2608agk-hf.pdf 
AP2608AGK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 1.5 Fast Switching Characteristic ID 0.92A G Halogen Free & RoHS Compliant Product S D Description Advanced Power MOSFETs from APEC provide the designer with the S best combination of fast switc
9.19. Size:88K ape
ap2602gy.pdf 
AP2602GY RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V S D Lower on-resistance RDS(ON) 34m D Surface mount package ID 6.3A G D SOT-26 D D Description Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible on-resistance, extremely efficien
9.20. Size:1368K cn apm
ap260n12tlg1.pdf 
AP260N12TLG1 120V N-Channel Enhancement Mode MOSFET Description The AP260N12TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =260A DS D R
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