Справочник MOSFET. AP2612GY-HF

 

AP2612GY-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP2612GY-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.5 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: SOT26

 Аналог (замена) для AP2612GY-HF

 

 

AP2612GY-HF Datasheet (PDF)

 ..1. Size:96K  ape
 ap2612gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2612GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS 30VDD Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6AGD RoHS CompliantDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the lowest possible on-resistanc

 9.1. Size:56K  ape
 ap2611gyt-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2611GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d

 9.2. Size:58K  ape
 ap2611gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2611GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Small Package Outline RDS(ON) 500m Surface Mount Device ID - 1.4AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2611 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

 9.3. Size:93K  ape
 ap2615gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2615GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2615 series are from Advanced Power innovated design and siliconGprocess technology

 9.4. Size:58K  ape
 ap2610gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2610GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Small Footprint & Low Profile Package ID 3.5AGD Halogen Free & RoHS Compliant ProductSOT-26 DDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto ach

 9.5. Size:206K  ape
 ap2617gy.pdf

AP2612GY-HF AP2612GY-HF

AP2617GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38mD Surface Mount Device ID -6AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2617 series are from Advanced Power innovated design and siliconprocess technology to ach

 9.6. Size:57K  ape
 ap2614gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2614GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VDD Lower On-resistance RDS(ON) 25mG Surface Mount Package ID 7.2AD RoHS Compliant & Halogen-Free SOT-26 DDDescriptionAP2614 series are from Advanced Power innovated design andsilicon process technology to achiev

 9.7. Size:55K  ape
 ap2613gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2613GY-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -20V Lower Gate Charge RDS(ON) 37m Small Footprint & Low Profile Package ID - 6.2AG RoHS Compliant & Halogen-FreeSSDDescriptionDAdvanced Power MOSFETs u

 9.8. Size:56K  ape
 ap2613gyt-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2613GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d

 9.9. Size:93K  ape
 ap2616gy-hf.pdf

AP2612GY-HF AP2612GY-HF

AP2616GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 18m Small Footprint & Low Profile Package ID 8.5AGD RoHS Compliant & Halogen-FreeDSOT-26DescriptionAP2616 series are from Advanced Power innovated design andDsilicon process t

 9.10. Size:167K  ape
 ap2615gey.pdf

AP2612GY-HF AP2612GY-HF

AP2615GEY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -30VD Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0AGDD RoHS Compliant & Halogen-FreeSOT-26DDescriptionAP2615 series are from Advanced Power innovated design and siliconGprocess technology to

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