AP2614GY-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP2614GY-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 145 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: SOT26
- подбор MOSFET транзистора по параметрам
AP2614GY-HF Datasheet (PDF)
ap2614gy-hf.pdf

AP2614GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VDD Lower On-resistance RDS(ON) 25mG Surface Mount Package ID 7.2AD RoHS Compliant & Halogen-Free SOT-26 DDDescriptionAP2614 series are from Advanced Power innovated design andsilicon process technology to achiev
ap2611gyt-hf.pdf

AP2611GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d
ap2612gy-hf.pdf

AP2612GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS 30VDD Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6AGD RoHS CompliantDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the lowest possible on-resistanc
ap2611gy-hf.pdf

AP2611GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Small Package Outline RDS(ON) 500m Surface Mount Device ID - 1.4AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2611 series are from Advanced Power innovated design and siliconGprocess technology to achieve t
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FMI05N60E | IXTT360N055T2 | WMK18N50C4 | KRF7706 | PPMET20V08 | FDWS9509L-F085 | KRF7401
History: FMI05N60E | IXTT360N055T2 | WMK18N50C4 | KRF7706 | PPMET20V08 | FDWS9509L-F085 | KRF7401



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