Справочник MOSFET. AP2622GY-HF

 

AP2622GY-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP2622GY-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.52 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: SOT26

 Аналог (замена) для AP2622GY-HF

 

 

AP2622GY-HF Datasheet (PDF)

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 ap2622gy-hf.pdf

AP2622GY-HF AP2622GY-HF

AP2622GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD1 Low Gate Charge D2 BVDSS 50V Small Package Outline RDS(ON) 1.8G1 G2 Surface Mount Package ID 520mA RoHS CompliantS2S1DescriptionD2Advanced Power MOSFETs utilized advanced processing techniques toS1achieve the lowest possible on-resistance, extre

 6.1. Size:200K  ape
 ap2622gy.pdf

AP2622GY-HF AP2622GY-HF

AP2622GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS 50VS1D1 Small Package Outline RDS(ON) 1.8G2 Surface Mount Package ID 520mAS2 RoHS Compliant SOT-26 G1DescriptionD1D2AP2622 series are from Advanced Power innovateddesign and silicon process technology to achieve theG1 G2

 9.1. Size:97K  ape
 ap2623gy-hf.pdf

AP2622GY-HF AP2622GY-HF

AP2623GY-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Low On-resistance RDS(ON) 170mG2 Surface Mount Package ID - 2AS2 RoHS Compliant & Halogen-Free SOT-26G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest poss

 9.2. Size:59K  ape
 ap2625gy-hf.pdf

AP2622GY-HF AP2622GY-HF

AP2625GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Capable of 2.5V Gate Drive RDS(ON) 185mG2 Surface Mount Package ID - 2AS2SOT-26 RoHS Compliant & Halogen-Free G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest

 9.3. Size:165K  ape
 ap2626gy.pdf

AP2622GY-HF AP2622GY-HF

AP2626GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Simple Drive Requirement BVDSS 30VS1D1 Smaller Outline Package RDS(ON) 72mG2 Surface mount package ID 3.3AS2SOT-26G1 RoHS Compliant & Halogen-FreeDescriptionAP2626 series are from Advanced Power innovatedD2D1design and silicon process techn

 9.4. Size:57K  ape
 ap2626gy-hf.pdf

AP2622GY-HF AP2622GY-HF

AP2626GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Simple Drive Requirement BVDSS 30VS1D1 Smaller Outline Package RDS(ON) 72mG2 Surface mount package ID 3.3AS2SOT-26G1 RoHS Compliant & Halogen-FreeDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesD2D1to achieve the lo

 9.5. Size:97K  ape
 ap2623gy.pdf

AP2622GY-HF AP2622GY-HF

AP2623GYRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS -30VD2D1 Low On-resistance RDS(ON) 170m Surface Mount Package ID - 2AG2G1S2S1DescriptionD2Advanced Power MOSFETs utilized advanced processing techniquesS1to achieve the lowest possible on-resistance, extremely efficient and

 9.6. Size:96K  ape
 ap2625gy.pdf

AP2622GY-HF AP2622GY-HF

AP2625GYRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD2D1 Low Gate Drive RDS(ON) 185m Surface Mount Package ID - 2AG2G1S2S1DescriptionD2S1Advanced Power MOSFETs utilized advanced processing techniquesD1to achieve the lowest possible on-resistance, extremely efficient andG2

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