Справочник MOSFET. AP30T03GH-HF

 

AP30T03GH-HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP30T03GH-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 12.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

AP30T03GH-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap30t03gh-hf.pdf pdf_icon

AP30T03GH-HF

AP30T03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 30m Fast Switching Characteristic ID 17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

 9.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T03GH-HF

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 9.2. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T03GH-HF

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

 9.3. Size:60K  ape
 ap30t10gk-hf.pdf pdf_icon

AP30T03GH-HF

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W , AP30N30WI , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , AP30P10GS , IRF640 , AP30T10GH-HF , AP30T10GI-HF , AP30T10GK-HF , AP30T10GM-HF , AP30T10GP-HF , AP30T10GS-HF , AP3310GH-HF , AP3310GJ-HF .

History: SI9945BDY | NVTFS002N04C

 

 
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