AP30T10GI-HF. Аналоги и основные параметры

Наименование производителя: AP30T10GI-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 18 ns

Cossⓘ - Выходная емкость: 115 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: TO220F

Аналог (замена) для AP30T10GI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP30T10GI-HF даташит

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 ap30t10gi-hf.pdf pdf_icon

AP30T10GI-HF

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resis

 5.1. Size:163K  ape
 ap30t10gi.pdf pdf_icon

AP30T10GI-HF

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16A G S Description AP30T10 series are from Advanced Power innovated design and silicon process technology to achie

 6.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T10GI-HF

AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.2. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T10GI-HF

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID3 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno

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