AP40N03GP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP40N03GP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 380 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: TO220
Аналог (замена) для AP40N03GP
AP40N03GP Datasheet (PDF)
ap40n03gp.pdf

AP40N03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGD TO-220SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-r
ap40n03gp.pdf

AP40N03GPwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5530 25 nC0.018 at VGS = 4.5 V 45DTO-220AB GSG D SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise note
ap40n03gp-hf.pdf

AP40N03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-FreeGTO-220DSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap40n03gs.pdf

AP40N03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGDS TO-263DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res
Другие MOSFET... AP4034ASGYT-HF , AP4034GH-HF , AP4034GM-HF , AP4034GMT-HF , AP4034GYT-HF , AP4036AGYT-HF , AP4085I , AP4085W , IRF520 , AP40N03GS , AP40P03GH , AP40P03GI-HF , AP40P03GJ , AP40P03GP , AP40T03GH , AP40T03GI , AP40T03GJ .
History: CM8N80F | AP4575GM-HF | AP3700M | SSM3K03FE | CTD03N003 | LSE65R099GF
History: CM8N80F | AP4575GM-HF | AP3700M | SSM3K03FE | CTD03N003 | LSE65R099GF



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