AP4424GM. Аналоги и основные параметры
Наименование производителя: AP4424GM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 410 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: SO8
Аналог (замена) для AP4424GM
- подборⓘ MOSFET транзистора по параметрам
AP4424GM даташит
..1. Size:219K ape
ap4424gm.pdf 
AP4424GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Low On-resistance RDS(ON) 9m D Fast Switching Characteristic ID 13.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
0.1. Size:96K ape
ap4424gm-hf.pdf 
AP4424GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Low On-resistance RDS(ON) 9m D Fast Switching Characteristic ID 13.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
8.1. Size:93K ape
ap4424agm.pdf 
AP4424AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.1. Size:171K ape
ap4423gm.pdf 
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4423 series are from
9.2. Size:60K ape
ap4426gm-hf.pdf 
AP4426GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6.5m D Low On-resistance ID 16A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.3. Size:93K ape
ap4429gm-hf.pdf 
AP4429GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 5m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.4. Size:118K ape
ap4425go.pdf 
AP4425GO RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Small & Thin Package D BVDSS -20V S S D Fast Switching Characteristic RDS(ON) 42m G S Capable of 1.8V Gate Drive ID -4.2A S TSSOP-8 D D Description G The Advanced Power MOSFETs from APEC provide the S designer with the best combination of fast switching, ru
9.5. Size:247K ape
ap4428gm.pdf 
AP4428GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6m D Low On-resistance ID 16A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de
9.6. Size:197K ape
ap4427gm.pdf 
AP4427GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D D Fast Switching Characteristic RDS(ON) 6.6m D RoHS Compliant ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device des
9.7. Size:96K ape
ap4423gm-hf.pdf 
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f
9.8. Size:170K ape
ap4426gm.pdf 
AP4426GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6.5m D Low On-resistance ID 16A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4426 series are from A
9.9. Size:93K ape
ap4420gh ap4420gj.pdf 
AP4420GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52A S RoHS Compliant Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H
9.10. Size:197K ape
ap4425gm.pdf 
AP4425GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D D Fast Switching Characteristic RDS(ON) 9m D RoHS Compliant ID 13A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
Другие IGBT... AP4418GH, AP4418GJ, AP4419GH, AP4419GJ, AP4420GH, AP4420GJ, AP4423GM-HF, AP4424AGM, STP75NF75, AP4425GM, AP4425GO, AP4426GM-HF, AP4427GM, AP4428GM, AP4429GM-HF, AP4430GEM, AP4430GM-HF
