Справочник MOSFET. AP4451GM-HF

 

AP4451GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP4451GM-HF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14 nC
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 420 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: SO8

 Аналог (замена) для AP4451GM-HF

 

 

AP4451GM-HF Datasheet (PDF)

 ..1. Size:95K  ape
ap4451gm-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4451GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance RDS(ON) 14mDD Fast Switching Characteristic ID -11AG RoHS Compliant & Halogen-FreeSSSSO-8DDescriptionAP4451 series are from Advanced Power innovated design and siliconprocess technol

 7.1. Size:95K  ape
ap4451gyt-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4451GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 14.5m RoHS Compliant & Halogen-Free ID -13.1AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device

 7.2. Size:58K  ape
ap4451gh-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4451GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, rugged

 9.1. Size:150K  1
ap4453gyt.pdf

AP4451GM-HF
AP4451GM-HF

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 9.2. Size:94K  ape
ap4453agyt-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4453AGYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAP4453A series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible o

 9.3. Size:49K  ape
ap4455geh-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4455GEH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 21mG Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide

 9.4. Size:150K  ape
ap4453gyt.pdf

AP4451GM-HF
AP4451GM-HF

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 9.5. Size:205K  ape
ap4453h.pdf

AP4451GM-HF
AP4451GM-HF

AP4453HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID -29.5AG RoHS Compliant & Halogen-FreeSDescriptionAP4453 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the lo

 9.6. Size:182K  ape
ap4453m.pdf

AP4451GM-HF
AP4451GM-HF

AP4453MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 13m Fast Switching Characteristic ID -11.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP4453 series are from Advanced Power innovated design and siliconprocess technology

 9.7. Size:59K  ape
ap4455gyt-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de

 9.8. Size:118K  ape
ap4453gyt-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 9.9. Size:95K  ape
ap4455gmt-hf.pdf

AP4451GM-HF
AP4451GM-HF

AP4455GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6AG RoHS Compliant & Halogen-FreeS DDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedi

 9.10. Size:112K  ape
ap4455gyt.pdf

AP4451GM-HF
AP4451GM-HF

AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de

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