AP4451GM-HF. Аналоги и основные параметры
Наименование производителя: AP4451GM-HF
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 420 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: SO8
Аналог (замена) для AP4451GM-HF
- подборⓘ MOSFET транзистора по параметрам
AP4451GM-HF даташит
..1. Size:95K ape
ap4451gm-hf.pdf 
AP4451GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance RDS(ON) 14m D D Fast Switching Characteristic ID -11A G RoHS Compliant & Halogen-Free S S S SO-8 D Description AP4451 series are from Advanced Power innovated design and silicon process technol
7.1. Size:95K ape
ap4451gyt-hf.pdf 
AP4451GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 14.5m RoHS Compliant & Halogen-Free ID -13.1A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device
7.2. Size:58K ape
ap4451gh-hf.pdf 
AP4451GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, rugged
9.1. Size:150K 1
ap4453gyt.pdf 
AP4453GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device desi
9.2. Size:94K ape
ap4453agyt-hf.pdf 
AP4453AGYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D AP4453A series are from Advanced Power innovated design and D silicon process technology to achieve the lowest possible o
9.3. Size:49K ape
ap4455geh-hf.pdf 
AP4455GEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 21m G Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide
9.4. Size:150K ape
ap4453gyt.pdf 
AP4453GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device desi
9.5. Size:205K ape
ap4453h.pdf 
AP4453H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID -29.5A G RoHS Compliant & Halogen-Free S Description AP4453 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lo
9.6. Size:182K ape
ap4453m.pdf 
AP4453M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D D Low On-resistance RDS(ON) 13m Fast Switching Characteristic ID -11.5A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP4453 series are from Advanced Power innovated design and silicon process technology
9.7. Size:59K ape
ap4455gyt-hf.pdf 
AP4455GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6A G D S D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de
9.8. Size:118K ape
ap4453gyt-hf.pdf 
AP4453GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device desi
9.9. Size:95K ape
ap4455gmt-hf.pdf 
AP4455GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6A G RoHS Compliant & Halogen-Free S D Description D D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedi
9.10. Size:112K ape
ap4455gyt.pdf 
AP4455GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6A G D S D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de
Другие MOSFET... AP4438CGM-HF
, AP4438GM-HF
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