Справочник MOSFET. AP4511GED-HF

 

AP4511GED-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP4511GED-HF
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6(5) A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.2 nC
   trⓘ - Время нарастания: 20(15) ns
   Cossⓘ - Выходная емкость: 110(165) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028(0.042) Ohm
   Тип корпуса: PDIP8

 Аналог (замена) для AP4511GED-HF

 

 

AP4511GED-HF Datasheet (PDF)

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 ap4511ged-hf.pdf

AP4511GED-HF AP4511GED-HF

AP4511GED-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AAdvanced Power MOSFETs from APEC

 5.1. Size:119K  ape
 ap4511ged.pdf

AP4511GED-HF AP4511GED-HF

AP4511GEDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AThe Advanced Power MOSFETs from APEC provide the

 7.1. Size:201K  ape
 ap4511gm.pdf

AP4511GED-HF AP4511GED-HF

AP4511GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 35V Simple Drive Requirement D2D2 RDS(ON) 25m Low On-resistance D1 D1 ID 7A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON)

 7.2. Size:85K  ape
 ap4511gm-hf.pdf

AP4511GED-HF AP4511GED-HF

AP4511GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 25mD1D1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC pr

 7.3. Size:195K  ape
 ap4511gh.pdf

AP4511GED-HF AP4511GED-HF

AP4511GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1P-CH BVDSS -35VS2G2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide theD1D2designer with

 7.4. Size:121K  ape
 ap4511gh-hf.pdf

AP4511GED-HF AP4511GED-HF

AP4511GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D1/D2 N-CH BVDSS 35V Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1S2 RoHS Compliant P-CH BVDSS -35VG2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide the d

 7.5. Size:152K  ape
 ap4511gh-a.pdf

AP4511GED-HF AP4511GED-HF

AP4511GH-ARoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 27m Fast Switching Performance ID 8.6AS1P-CH BVDSS -35VG1S2G2RDS(ON) 45mDescription ID -6.7ATO-252-4LThe Advanced Power MOSFETs from APEC provide theD1D2desig

 7.6. Size:156K  ape
 ap4511gd.pdf

AP4511GED-HF AP4511GED-HF

AP4511GDRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 35VD2D1D1 Fast Switching Speed RDS(ON) 25m PDIP-8 Package ID 7AG2P-CH BVDSS -35VS2PDIP-8G1S1RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

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