AP4511GH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP4511GH
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 10.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15(12) A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 7(6) ns
Cossⓘ - Выходная емкость: 150(165) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03(0.048) Ohm
Тип корпуса: TO252-4L
AP4511GH Datasheet (PDF)
ap4511gh.pdf
AP4511GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1P-CH BVDSS -35VS2G2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide theD1D2designer with
ap4511gh-hf.pdf
AP4511GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D1/D2 N-CH BVDSS 35V Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1S2 RoHS Compliant P-CH BVDSS -35VG2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide the d
ap4511gh-a.pdf
AP4511GH-ARoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 27m Fast Switching Performance ID 8.6AS1P-CH BVDSS -35VG1S2G2RDS(ON) 45mDescription ID -6.7ATO-252-4LThe Advanced Power MOSFETs from APEC provide theD1D2desig
ap4511gm.pdf
AP4511GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 35V Simple Drive Requirement D2D2 RDS(ON) 25m Low On-resistance D1 D1 ID 7A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON)
ap4511gm-hf.pdf
AP4511GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 25mD1D1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC pr
ap4511ged.pdf
AP4511GEDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AThe Advanced Power MOSFETs from APEC provide the
ap4511gd.pdf
AP4511GDRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 35VD2D1D1 Fast Switching Speed RDS(ON) 25m PDIP-8 Package ID 7AG2P-CH BVDSS -35VS2PDIP-8G1S1RDS(ON) 40mDescription ID -6.1AAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
ap4511ged-hf.pdf
AP4511GED-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement N-CH BVDSS 40VD2D1 Lower Gate Charge RDS(ON) 28mD1 Fast Switching Performance ID 6AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VS2PDIP-8G1S1RDS(ON) 42mDescription ID -5AAdvanced Power MOSFETs from APEC
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918