2SK536 - описание и поиск аналогов

Ordering number EN2550 N-Channel Enhancement MOS Silicon FET 2SK536 Analog Switch Applications Features Package Dimensions Large yfs . unit mm Enhancement type. 2024B Low ON-state resistance. [2SK536] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Drain 3 Source SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbo

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isc N-Channel MOSFET Transistor 2SK532 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.085 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK530 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK538 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c

isc N-Channel MOSFET Transistor 2SK531 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK534 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK539 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies