Справочник MOSFET. AP60N03GJ

 

AP60N03GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP60N03GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22.4 nC
   trⓘ - Время нарастания: 81 ns
   Cossⓘ - Выходная емкость: 440 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP60N03GJ

 

 

AP60N03GJ Datasheet (PDF)

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 ap60n03gh ap60n03gj.pdf

AP60N03GJ AP60N03GJ

AP60N03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d

 6.1. Size:72K  ape
 ap60n03gs.pdf

AP60N03GJ AP60N03GJ

AP60N03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 6.2. Size:162K  ape
 ap60n03gp.pdf

AP60N03GJ AP60N03GJ

AP60N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP60N03 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

 9.1. Size:248K  ape
 ap60n2r5in.pdf

AP60N03GJ AP60N03GJ

AP60N2R5INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60N2R5 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.2. Size:199K  ape
 ap60n2r5j.pdf

AP60N03GJ AP60N03GJ

AP60N2R5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60N2R5 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achi

 9.3. Size:389K  ncepower
 nceap60nd30ag.pdf

AP60N03GJ AP60N03GJ

http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS

 9.4. Size:644K  ncepower
 nceap60nd60g.pdf

AP60N03GJ AP60N03GJ

NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R

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