2SK951-MR. Аналоги и основные параметры
Наименование производителя: 2SK951-MR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 60 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: SC-67
Аналог (замена) для 2SK951-MR
- подборⓘ MOSFET транзистора по параметрам
2SK951-MR даташит
6.1. Size:138K fuji
2sk951-m.pdf 
"2SK951M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.1. Size:145K 1
2sk959.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.2. Size:143K 1
2sk958.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.3. Size:142K 1
2sk956.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.5. Size:142K 1
2sk955.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.6. Size:227K 1
2sk950.pdf 
FUJI POWER MOSFET 2SK950 N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maximum ratings and characterist
9.7. Size:145K 1
2sk953.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.8. Size:142K fuji
2sk957-m.pdf 
"2SK957M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.12. Size:201K inchange semiconductor
2sk959.pdf 
isc N-Channel MOSFET Transistor 2SK959 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage. high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
9.13. Size:197K inchange semiconductor
2sk958.pdf 
isc N-Channel MOSFET Transistor 2SK958 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage. high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
9.14. Size:203K inchange semiconductor
2sk956.pdf 
isc N-Channel MOSFET Transistor 2SK956 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co
9.15. Size:202K inchange semiconductor
2sk954.pdf 
isc N-Channel MOSFET Transistor 2SK954 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage. high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
9.16. Size:202K inchange semiconductor
2sk955.pdf 
isc N-Channel MOSFET Transistor 2SK955 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co
9.17. Size:202K inchange semiconductor
2sk950.pdf 
isc N-Channel MOSFET Transistor 2SK950 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX
9.18. Size:279K inchange semiconductor
2sk957-mr.pdf 
isc N-Channel MOSFET Transistor 2SK957-MR FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 8.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
9.19. Size:200K inchange semiconductor
2sk952.pdf 
isc N-Channel MOSFET Transistor 2SK952 DESCRIPTION Drain Current I =2.5A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel
9.20. Size:204K inchange semiconductor
2sk953.pdf 
isc N-Channel MOSFET Transistor 2SK953 DESCRIPTION Drain Current I =2.5A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel
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